Document
S1DLW – S1MLW
Taiwan Semiconductor
1A, 200V - 1000V Standard Surface Mount Rectifier
FEATURES
● Ideal for automated placement ● Compact package size ● High surge current capability ● Low power loss, high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● General purpose
KEY PARAMETERS
PARAMETER VALUE UNIT
IF VRRM
1
A
200 - 1000
V
IFSM TJ MAX Package
30
A
175
°C
SOD-123W
Configuration
Single die
MECHANICAL DATA
● Case: SOD-123W ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately)
SOD-123W
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL S1DLW S1GLW S1JLW S1KLW S1MLW UNIT
Marking code on the device
1DLW
1GLW 1JLW
1KLW 1MLW
Repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Reverse voltage, total rms value VR(RMS)
140
280
420
560
700
V
Forward current
IF
Peak forward surge current,
8.3ms single half sine-wave
IFSM
superimposed on rated load
Junction temperature
TJ
1
A
30
A
- 55 to +175
°C
Storage temperature
TSTG
- 55 to +175
°C
1
Version: D2109
S1DLW – S1MLW
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance
SYMBOL RӨJL RӨJA
TYP 25 80
UNIT °C/W °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage(1)
IF = 1A, TJ = 25°C
VF
Reverse current @ rated VR(2)
TJ = 25°C
IR
TJ = 125°C
Junction capacitance
1MHz, VR = 4.0V
CJ
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
TYP 8
MAX 1.1 1 50 -
UNIT V µA µA pF
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
S1xLW
SOD-123W
Notes: 1. “x” defines voltage from 200V(S1DLW) to 1000V(S1MLW)
PACKING 10,000 / Tape & Reel
2
Version: D2109
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve
2
S1DLW – S1MLW
Taiwan Semiconductor
Fig.2 Typical Junction Capacitance
100
CAPACITANCE (pF)
AVERAGE FORWARD CURRENT (A)
(A )
INSTANTANEOUS REVERSE CURRENT (uA)
1
0 25
55
85
115
145
175
LEAD TEMPERATURE (°C)
Fig.3 Typical Reverse Characteristics
10
1
f=1.0MHz Vsig=50mVp-p 0.1
0.1
1
10
100
REVERSE VOLTAGE (V)
Fig.4 Typical Forward Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
100
10 10
TJ=125°C 10
1
0.1
TJ=25°C
0.01 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
UF1DLW 1
TJ=125°C
TJ=125°C
10.1 TJ=25°C
TJ=25°C
0.01
Pulse width 300μs
0.1
1% duty cyPcluelse width
0.0001.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
Fig.5 Maximum Non-Repetitive Forward Surge Current
40 8.3ms single half si.