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S1JLW Dataheets PDF



Part Number S1JLW
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Rectifiers
Datasheet S1JLW DatasheetS1JLW Datasheet (PDF)

S1DLW – S1MLW Taiwan Semiconductor 1A, 200V - 1000V Standard Surface Mount Rectifier FEATURES ● Ideal for automated placement ● Compact package size ● High surge current capability ● Low power loss, high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 200 - 1000 V IFSM TJ.

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S1DLW – S1MLW Taiwan Semiconductor 1A, 200V - 1000V Standard Surface Mount Rectifier FEATURES ● Ideal for automated placement ● Compact package size ● High surge current capability ● Low power loss, high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 200 - 1000 V IFSM TJ MAX Package 30 A 175 °C SOD-123W Configuration Single die MECHANICAL DATA ● Case: SOD-123W ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately) SOD-123W ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL S1DLW S1GLW S1JLW S1KLW S1MLW UNIT Marking code on the device 1DLW 1GLW 1JLW 1KLW 1MLW Repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 140 280 420 560 700 V Forward current IF Peak forward surge current, 8.3ms single half sine-wave IFSM superimposed on rated load Junction temperature TJ 1 A 30 A - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C 1 Version: D2109 S1DLW – S1MLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA TYP 25 80 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL Forward voltage(1) IF = 1A, TJ = 25°C VF Reverse current @ rated VR(2) TJ = 25°C IR TJ = 125°C Junction capacitance 1MHz, VR = 4.0V CJ Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TYP 8 MAX 1.1 1 50 - UNIT V µA µA pF ORDERING INFORMATION ORDERING CODE(1) PACKAGE S1xLW SOD-123W Notes: 1. “x” defines voltage from 200V(S1DLW) to 1000V(S1MLW) PACKING 10,000 / Tape & Reel 2 Version: D2109 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 2 S1DLW – S1MLW Taiwan Semiconductor Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) (A ) INSTANTANEOUS REVERSE CURRENT (uA) 1 0 25 55 85 115 145 175 LEAD TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics 10 1 f=1.0MHz Vsig=50mVp-p 0.1 0.1 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 10 10 TJ=125°C 10 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW 1 TJ=125°C TJ=125°C 10.1 TJ=25°C TJ=25°C 0.01 Pulse width 300μs 0.1 1% duty cyPcluelse width 0.0001.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 40 8.3ms single half si.


S1GLW S1JLW S1KLW


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