PQMH10

PQMH10 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 4 November 2015 Product data sheet 1. General description NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD10. 2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height of 0.37 mm Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IO output current Per transistor R1 bias resistor 1 R2/R1 bias resistor ratio Conditions open base Tamb = 25 °C Min Typ Max Unit - - 50 V - - 100 mA [1] 1.54 2.2 2.8...