Document
PDTB123TT
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
Rev. 4 — 8 November 2010
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123TT.
1.2 Features and benefits
500 mA output current capability Built-in bias resistor Simplifies circuit design
Reduces component count Reduces pick and place costs AEC-Q101 qualified
1.3 Applications
Digital application in automotive and industrial segments
Control of IC inputs
Cost-saving alternative for BC807 series in digital applications
Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input)
Conditions open base
Min Typ --1.54 2.2
Max −50 −500 2.86
Unit V mA kΩ
NXP Semiconductors
PDTB123TT
PNP 500 mA resistor-equip.