MMBTA14

SMD Darlington Transistor (NPN) MMBTA13/MMBTA14 SMD Darlington Transistor (NPN) Features This device is designed for applications requiring extremely High current gain at collector currents to 1.0A RoHS compliance SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTA13 MMBTA14 Marking Code 1M 1N VCBO Collector-Base Voltage 30 VCES Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 10 IC Collector Current 300 Ptot Power Dissipation up to TA=25°C 250 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V mA mW °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH 2008-06-12 Page 1 of 3 SMD Darlington Transistor (NPN) MMBTA13/MMBTA14 Electrical Char...