FQPF8N60

FQP8N60/FQPF8N60 600V,8A N-Channel MOSFET General Description Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 8A < 0.9Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP8N60 FQPF8N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 8 8* 6.2 6.2* 32 3.2 150 300 5...