D882H

SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) FEATURE  Low VCE(sat)  Large current capacity MAKING: D882H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Value 70 60 6 3 500 250 150 -55～+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol Test conditions V(BR)C=BO IC=100µA, IE 0 V(BR=)CEO IC=10mA, IB 0 V(BR=)EBO I...