JANSR2N7550U2

PD-94493D IRHNA597160 JANSR2N7550U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA597160 100 kRads(Si) IRHNA593160 300 kRads(Si) RDS(on) 0.049 0.049 ID -47A -47A QPL Part Number JANSR2N7550U2 JANSF2N7550U2 100V, P-CHANNEL R5REF: MIL-PRF-19500/713 TECHNOLOGY SMD-2 Description IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. . Features  Single Event Effect (SEE) Hardened  Ultra Low RDS(on)  Low Total Gate Charge  Simple Drive Requiremen...