POWER MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level IRHMS67260 1...
Description
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level IRHMS67260 100 kRads(Si) IRHMS63260 300 kRads(Si)
RDS(on) 0.029 0.029
ID 45A* 45A*
QPL Part Number JANSR2N7584T1 JANSF2N7584T1
PD-94667H
IRHMS67260 JANSR2N7584T1
200V, N-CHANNEL
REF: MIL-PRF-19500/753
R6 TECHNOLOGY
Low-Ohmic TO-254AA
Description
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical
Features
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate C...
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