JANSR2N7584T1

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100 kRads(Si) IRHMS63260 300 kRads(Si) RDS(on) 0.029 0.029 ID 45A* 45A* QPL Part Number JANSR2N7584T1 JANSF2N7584T1 PD-94667H IRHMS67260 JANSR2N7584T1 200V, N-CHANNEL REF: MIL-PRF-19500/753 R6 TECHNOLOGY Low-Ohmic TO-254AA Description IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical Features  Low RDS(on)  Fast Switching  Single Event Effect (SEE) Hardened  Low Total Gate C...