LL4448

Features * Fast switching diode in MiniMELF case especially suited for automatic surface mounting. * Identical electrically to standard 1N4448. LL4448 Silicon Epitaxial Planar Switching Diode Cathode C B A LL-34 INCHES MM DIM MIN MAX MIN MAX A 0.134 0.142 3.40 3.60 B 0.008 0.016 0.20 0.40 C 0.055 0.059 1.40 1.50 Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Reverse Voltage Parameter Average Rectified Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range Note: 1) Valid provided that electrodes are kept at ambient temperature. Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg Value 100 75 150 500 5001) 175 - 65 to + 175 Unit V V mA mA mW ℃ ℃ Version: 6.1 www.jgdsemi.com LL4448 Silicon Epitaxial Planar Switching Diode Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Leakage Current at VR = 20 V at VR = 7...