SFB120N80

Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Application Motor Drives UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications SFP(B)100N80 N-MOSFET 80V, 100A, 5.7mΩ Product Summary VDS RDS(on)@VGS=10V ID 80V 5.7 mΩ 100A Part ID Package Type Marking SFP120N80 SFB120N80 TO-220 TO-263 100N80 100N80 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS Value 80 Unit V ID ID pulse 100 80 480 A EAS VGS Ptot Tj , Tstg 1000 ±25 178 -55...+150 mJ V W ℃ Page 1 SFP(B)100N80 Thermal Resistance Parameter Thermal resistance, junction – case. Max Thermal resistance, junction – ambient. M...