SFB120N100

SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features  Uses advanced SGT MOSFET technology  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tested Application  Motor Drives  UPS (Uninterruptible Power Supplies)  DC/DC converter  General purpose applications Product Summary VDS RDS(on)@VGS=10V ID 100V 4.0 mΩ 120A Part ID Package Type SFP120N100 TO-220 SFB120N100 TO-263 Marking 120N100 120N100 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.033mH,VDS=80V) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS ID ID pulse EAS VGS Ptot Tj , Tstg Value 100 120 90 480 600 ±20 227 -55...+150 Unit V A mJ V W ℃ Thermal Resistance Parameter Thermal resistance, junction – case. Max Thermal resistance, jun...