SFP120N85

Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Application Motor Drives UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications SFP(B)120N85 N-MOSFET 85V, 120A, 5.5mΩ Product Summary VDS RDS(on)@VGS=10V ID 85V 5.5 mΩ 120A Part ID Package Type Marking SFP120N85 SFB120N85 TO-220 TO-263 120N85 120N85 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS Value 85 Unit V ID ID pulse 138 120 87 480 A EAS VGS Ptot Tj , Tstg 1000 ±20 189 -55...+150 mJ V W ℃ Page 1 SFP(B)120N85 Thermal Resistance Parameter Thermal resistance, jun...