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FGA90N33ATD

Fairchild Semiconductor

90A PDP Trench IGBT

FGA90N33ATD 330V, 90A PDP Trench IGBT FGA90N33ATD 330V, 90A PDP Trench IGBT Features • High current capability • Low sa...


Fairchild Semiconductor

FGA90N33ATD

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Description
FGA90N33ATD 330V, 90A PDP Trench IGBT FGA90N33ATD 330V, 90A PDP Trench IGBT Features High current capability Low saturation voltage: VCE(sat) =1.1V @ IC = 20A High input impedance Fast switching RoHS compliant Applications PDP System August 2011 General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC IC pulse(1) IC pulse(2) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 25oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(I...




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