Document
ESMT
SDRAM
M12L2561616A (2S)
4M x 16 Bit x 4 Banks Synchronous DRAM
FEATURES
y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key programs
- CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) y All inputs are sampled at the positive going edge of the system clock y Burst Read single write operation y DQM for masking y Auto & self refresh y 64ms refresh period (8K cycle) y All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID M12L2561616A-5TG2S M12L2561616A-6TG2S M12L2561616A-7TG2S M12L2561616A-5BG2S M12L2561616A-6BG2S M12L2561616A-7BG2S
Max Freq. Package Comments
200MHz TSOP II Pb-free
166MHz TSOP II Pb-free
143MHz TSOP II Pb-free
200MHz BGA
Pb-free
166MHz BGA
Pb-free
143MHz BGA
Pb-free
GENERAL DESCRIPTION
The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.