DatasheetsPDF.com

F59L1G81MA-25BCIG2Y Dataheets PDF



Part Number F59L1G81MA-25BCIG2Y
Manufacturers ESMT
Logo ESMT
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet F59L1G81MA-25BCIG2Y DatasheetF59L1G81MA-25BCIG2Y Datasheet (PDF)

ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Mul.

  F59L1G81MA-25BCIG2Y   F59L1G81MA-25BCIG2Y


Document
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) Operation Temperature Condition -40°C~85°C 1 Gbit (128M x 8) 3.3V NAND Flash Memory z Reliable CMOS Floating Gate Technology - ECC Requirement: - 4bit/512Byte, - Endurance: 100K Program/Erase cycles - Data Retention: 10 years z Command Register Operation z Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download z NOP: 4 cycles z Cache Program Oper.


F59L1G81MA-25BIG2Y F59L1G81MA-25BCIG2Y M12L64164A-5TG2M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)