Document
ESMT
F49L800UA/F49L800BA
Operation Temperature Condition -40°C~85°C
8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
1. FEATURES
z Single supply voltage 2.7V-3.6V z Fast access time: 70/90 ns
z 1,048,576x8 / 524,288x16 switchable by BYTE pin z Compatible with JEDEC standard
- Pin-out, packages and software commands compatible with single-power supply Flash
z Low power consumption - 7mA typical active current - 25uA typical standby current
z 100,000 program/erase cycles typically z 20 years data retention z Command register architecture
- Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 KB,
one 32 KB, and fifteen 64 KB) z Auto Erase (chip & sector) and Auto Program
- Any combination of sectors can be erased concurrently; Chip erase also provided.
- Automatically program and verify data at specified address
z Erase Suspend/Erase Resume - Suspend or Resume erasing sectors to allow the read/program in another sector
z Ready/Busy (RY/ BY ) .