F49L800BA

ESMT F49L800UA/F49L800BA Operation Temperature Condition -40°C~85°C 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory 1. FEATURES z Single supply voltage 2.7V-3.6V z Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin z Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash z Low power consumption - 7mA typical active current - 25uA typical standby current  z 100,000 program/erase cycles typically z 20 years data retention z Command register architecture - Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 KB, one 32 KB, and fifteen 64 KB)  z Auto Erase (chip & sector) and Auto Program - Any combination of sectors can be erased concurrently; Chip erase also provided. - Automatically program and verify data at specified address z Erase Suspend/Erase Resume - Suspend or Resume erasing sectors to allow the read/program in another sector z Ready/Busy (RY/ BY ) ...