M14D5121632A-2.5BBG2A

ESMT M14D5121632A (2A) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.  On-chip DLL  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition  Quad bank operation  CAS Latency : 3, 4, 5, 6, 7, 8, 9  Additive Latency: 0, 1, 2, 3, 4, 5, 6, 7  Burst Type : Sequential and Interleave  Burst Length : 4, 8  All inputs except data & DM are sampled at the rising edge of the system clock(CLK)  Data I/O transitions on both edges of data strobe (DQS)  DQS is edge-aligned with data for READ; center-aligned with data for WRITE  Data mask (DM) for write masking only  Off-Chip-Driver (OCD) impedance adjustment  On-Die-Termination for better signal quality  Special function support - 50/ 75/ 150 ohm ODT - High Temperature Self refresh rate enable - Duty Cycle Corrector - Partial Array Self Refresh (PASR)  Auto & Self refresh  Refresh cycle : - 8192 cycles/64ms (7.8μ s refresh interval) at 0 ℃ ≦ TC ≦ +85 ℃ - 8192 cycles/32ms (3.9μ s refresh interval) at +85 ℃ ＜ TC ≦ +95 ℃  SSTL_18 interface  If tCK < 1.875ns, the device can not support Write with Auto Precharge function. Elite Semiconductor Microelectronics Technology Inc. Publication Date : Jul. 2022 Revision : 1.2 1/6...