3.3V 1 Gbit SPI-NAND Flash Memory
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up...
Description
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined.
F50L1G41LB (2M)
3.3V 1 Gbit SPI-NAND Flash Memory
Values 3.3V
x1, x21, x4 104MHz
1-bit 9.6ns 104MT/s 1ms (maximum value) 1ms (maximum value)
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V)
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us
Memory Cell: 1bit/Memory Cell Support SPI-Mode 0 and SPI-Mode 31
Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms
Hardware Data Protection - Program/Erase Lockout During Power Transitions
Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years
Command Register Operation NOP: 4 cycles OTP Operation Bad-Block-Protect Boot Read
Note: 1. Mode 0: CPOL = 0, CPHA = 0; Mode 3: CPOL = 1, CPHA = 1
ORDERING INFORMATION
Product ID
Speed
F50L1G41LB-104YG2M F50L1G41LB-104YG2ME
104MHz 104MHz
Package 8-contact WSON 8-contact WSON (without expose metal pad)
8x6mm 8x6mm
Comments Pb-free Pb-free
Elite Semiconductor Microelectronics Technology Inc.
Publication Date: Nov. 2022
Revision: 1.6
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