1M x 16 Bit x 4 Banks Double Data Rate SDRAM
ESMT
M13S64164A
DDR SDRAM
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Features
z JEDEC Standard z Internal pipeline...
Description
ESMT
M13S64164A
DDR SDRAM
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Features
z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe (DQS) z On-chip DLL z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Quad bank operation z CAS Latency : 2, 2.5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock(CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for reads; center-aligned with data for WRITE z Data mask (DM) for write masking only z VDD = 2.3V ~ 2.7V, VDDQ = 2.3V ~ 2.7V z Auto & Self refresh z 64ms refresh period, 4K cycle z SSTL-2 I/O interface z 66pin TSOPII and 60 ball BGA package
Ordering Information:
PRODUCT NO. M13S64164A -5TG M13S64164A -6TG M13S64164A -5BG M13S64164A -6BG
MAX FREQ 200MHz 166MHz 200MHz 166MHz...
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