Document
AOT410L/AOB410L
100V N-Channel MOSFET SDMOS TM
General Description
The AOT410L/AOB410L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS= 7V)
100% UIS Tested 100% Rg Tested
100V 150A < 6.5mΩ (< 6.2mΩ∗) < 7.5mΩ (< 7.2mΩ∗)
Top View
TO-220 Bottom View
Top View
TO-263 D2PAK
Bottom View
D
DD DD
AOT410L
S GD
Orderable Part Number
AOT410L AOB410L
SDG
Package Type
TO-220 TO-263
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy .