Document
IRFP150N
HEXFET Power MOSFET
FEATURES
z Avalanche Process Technology z Dynamic dv/dt Rating
z 175 Operating Temperature
z Fast Switching z Fully Avalanche Rated
Description
Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-3P
VDSS=100V RDS(on)=0.036W ID=42A
Absolute Maximum Ratings
ID @ Tc=25 ID @ Tc=100 IDM PD @ Tc=25
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @10V Continuous Drain Current, VGS @1.