NVD5C454NL

NVD5C454NL MOSFET – Power, Single, N-Channel, 40 V, 3.9 mW, 88 A Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- TC = 25°C ID rent RqJC (Notes 1 & 3) Steady TC = 100°C Power Dissipation RqJC State TC = 25°C PD (Note 1) TC = 100°C 84 A 60 56 W 28 Continuous Drain Current RqJA (Notes 1, 2 & 3) TA = 25°C ID Steady TA = 100°C Power Dissipation RqJA State TA = 25°C PD (Notes 1 & 2) TA = 100°C 20 A 14 3.1 W 1.5 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 463 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) IS 46 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 8.3 A) EAS 205 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) (Note 1) RqJC 2.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA ...