MODE MOSFET. DMP2045U Datasheet

DMP2045U MOSFET. Datasheet pdf. Equivalent

DMP2045U Datasheet
Recommendation DMP2045U Datasheet
Part DMP2045U
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Feature DMP2045U; DMP2045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) max 45mΩ @ VGS = -4.
Manufacture Diodes
Datasheet
Download DMP2045U Datasheet




Diodes DMP2045U
DMP2045U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-20V
RDS(ON) max
45m@ VGS = -4.5V
58m@ VGS = -2.5V
90m@ VGS = -1.8V
ID
TA = +25°C
-4.3A
-3.8A
-3.1A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
SOT23
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
D
D
G
ESD protected Gate
Top View
GS
Top View
Internal Schematic
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Compliance
Case
Packaging
DMP2045U-7
Standard
SOT23
3,000/Tape & Reel
DMP2045U-13
Standard
SOT23
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
45U
45U = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
2018
F
Feb Mar
23
2019
G
Apr
4
2020
H
May
5
Jun
6
2021
I
Jul
7
2022
J
Aug Sep
89
2023
K
Oct
O
2024
L
Nov Dec
ND
DMP2045U
Document number: DS40478 Rev. 3 - 2
1 of 7
www.diodes.com
December 2018
© Diodes Incorporated



Diodes DMP2045U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
DMP2045U
Value
-20
±8
-4.3
-3.5
-1.2
-25
Unit
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Value
0.8
154
1.2
98
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BVDSS
-20
TJ = +25°C
IDSS
-1
IGSS — — ±10
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-0.3
32
-1.0
45
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
RDS(ON)
42
58
54 90
VSD -0.7 -1.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
634
81
66
20
6.8
0.7
1.6
4.2
3.4
23
9.6
1.8
9.4
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
V
µA
µA
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8.0V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -1.0A
VGS = 0V, IS = -1.0A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V
ID = -4A
VDD = -10V, VGS = -4.5V,
RL = 3.3Ω, RG = 1Ω
IF = -1.0A, di/dt = 100A/μs
IF = -1.0A, di/dt = 100A/μs
DMP2045U
Document number: DS40478 Rev. 3 - 2
2 of 7
www.diodes.com
December 2018
© Diodes Incorporated



Diodes DMP2045U
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
0.1
VGS = -2.5V
VGS = -3.0V
VGS = -2.0V
VGS = -4.0V
VGS = -4.5V
VGS = -1.8V
VGS = -1.5V
VGS = -1.2V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.08
VGS = -1.8V
0.06
0.04
0.02
VGS = -2.5V
VGS = -4.5V
0
0 4 8 12 16 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.06
0.05
VGS = -4.5V
TJ = 150
0.04
0.03
TJ = 125
TJ = 85
TJ = 25
0.02
TJ = -55
15
VDS = -5V
12
DMP2045U
9
6
3
0
0
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1.8
TJ = 150
TJ = 125
TJ = 85
TJ = 25
TJ = -55
0.5 1 1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
ID = -4.0A
ID = -3.5A
246
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
8
1.6 VGS = -4.5V, ID = -4.0A
1.4 VGS = -2.5V, ID = -3.5A
1.2
1 VGS = -1.8V, ID = -2.0A
0.8
0.01
0 5 10 15 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMP2045U
Document number: DS40478 Rev. 3 - 2
3 of 7
www.diodes.com
December 2018
© Diodes Incorporated





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