SILICON BIDIRECTIONAL DIAC
LLDB3 THRU
LLDB6
SILICON BIDIRECTIONAL DIAC
The three layer,two terminal,axial load, hermetically sealed diaces are d...
Description
LLDB3 THRU
LLDB6
SILICON BIDIRECTIONAL DIAC
The three layer,two terminal,axial load, hermetically sealed diaces are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is whiin three volts (LLDB3,LLDC34,LLDB4,LLDB6) or four volts(LLDB6) . These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming,universal motor speed control, and heat control.
(LLDB3,LLDC34,LLDB4,LLDB6) are bi-di designed to coperate in conjunction
rwei tcht iTor ni aacl st rai gngdeSdCdRi o,sd e
Case: Mini-MELF glass case(SOD-80)
Characteristic
Breakover voltage(note 2)
Power Dissipation on Printed Circuit (L=10mm) Repetitive Peak on -state Current Breakover voltage Symmetry Dynamic Breakover voltage(note 1) Output r voltage(note 1) Breakover Current(note 1)
Symbol
VBO
PC I TRM +VBO -VBO
V VO IBO
Test conditions
C=22nF(NOT 2) See diagram 1
Min
Typ Max
LLDB3 LL...
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