SFTN6016MP

SFTN6016MP N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain DFN3030 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Drain-Gate Voltage Drain Current - Continuous 1) Drain Current – Pulse 2) TC = 25℃ TC = 100℃ Power Dissipation 3) TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Thermal Characteristics Parameter Symbol Thermal Resistance - Junction to Ambient 1) Thermal Resistance - Junction to Case 1) 1) The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2) The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3) The power dissipation is limited by 150℃ junction temperature. RθJA RθJC Value 60 ± 20 44 28 100 42 - 55 to + 150 Max. 75 3 Unit V V A A W ℃ Unit ℃/W ℃/W Winning Team Dated: 20/07/2017 Rev:01 SFTN6016MP Characteristics at Tj = 25℃ unless...