SFTN1450R

SFTN1450R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current 1) TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Maximum Thermal Resistance from Juntion to Case Operating Junction and Storage Temperature Range 1) Pulse width limited by safe operating area. Symbol VDS VGS ID ID IDM PD RθJC TJ, Tstg Value 500 ± 25 12 8 48 90 1.39 - 55 to + 150 Unit V V A A A W ℃/W ℃ Winning Team Dated: 14/12/2017 SFTN1450R Characteristics at Ta = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 1 mA Drain-Source Leakage Current at VDS = 500 V at VDS = 500 V, TC = 125℃ Gate Leakage Current at VGS = ± 25 V Gate-Source Threshold Voltage at VDS = VGS, ID = 100 µA Drain-Source On-State Resistance at VGS = 10 V, ID = 6 A Input Capacitance at VGS = 0 V, VDS = 50 V, f...