SFTN1180

SFTN1180 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC(f > 1 Hz) Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS VGS ID IDM Ptot TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Value 800 ± 20 ± 30 11 7.1 33 41 - 55 to + 150 Max. 0.8 62 Unit V V V A A W ℃ Unit K/W K/W Winning Team Dated: 11/03/2016 Rev: 01 SFTN1180 Characteristics at TJ = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 0.25 mA Drain-Source Leakage Current at VDS = 800 V at VDS = 800 V, TJ = 150℃ Gate Leakage Current at VGS = 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 680 ...