SFTN0825R

SFTN0825R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Avalanche energy,single pulse 1) Avalanche current, single pulse 2) Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM EAS IAS PD TJ,Tstg Value 250 ±30 8 5 16 132 2.1 78 - 50 to 150 Unit V V A A mJ A W ℃ Thermal Characteristics Parameter Symbol Max. Thermal Resistance from Juntion to Ambient 3) RθJA 55 Thermal Resistance from Juntion to Case RθJC 1) L= 60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C. 2) Repetitive Rating : Pulsed width limited by maximum junction temperature. 3) These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 1.6 Unit ℃/W ℃/W Winning Team Dated: 1...