N-Channel MOSFET
SFTN2906
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Ab...
Description
SFTN2906
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current at VGS = 10 V
TC = 25℃ TC = 100℃
Peak Drain Current
TC = 25℃
Power Dissipation
Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM Ptot EAS TJ, Tstg
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case
Symbol RθJC
Value 60 ± 20 84 59 336 38 140
- 55 to + 150
Max. 3.9
Unit V V A A W mJ ℃
Unit K/W
Winning Team
Dated: 24/11/2017
SFTN2906
Characteristics at TJ = 25℃ unless otherwise specified
Parameter
Drain-Source Breakdown Voltage at ID = 1 mA Drain-Source Leakage Current at VDS = 60 V at VDS = 60 V, TJ = 125℃
Gate Leakage Current at VGS = 20 V
Gate-Source Threshold Voltage at VDS = VGS, ID = 75 µA
Drain-Source On-State Resi...
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