SFTN0865

SFTN0865 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current 1) Drain Current - Pulsed 1) TC = 25℃ TC = 100℃ Power Dissipation Operating Junction Temperature Storage Temperature Range 1) Drain current limited by maximum junction temperature. Symbol VDS VGS ID IDM Ptot Tj Tstg Value 650 ± 30 8 5 18 40.3 150 - 55 to + 150 Unit V V A A W ℃ ℃ Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Max. 3.1 62.5 Unit ℃/W ℃/W Winning Team Dated: 26/07/2017 Rev:01 SFTN0865 Characteristics at TC = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 μA Drain-Source Leakage Current at VDS = 650 V Gate Leakage Current at VGS = ± 30 V Gate-Source Threshold Voltage at VDS = VGS, ID = ...