SFTN2922R

SFTN2922R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Parameter Peak Drain Current 3) Power Dissipation 2) Operating Junction and Storage Temperature Range TC = 25℃ TC = 100℃ TC = 25℃ TC = 100℃ Symbol VDS VGS ID IDM PD TJ,Tstg Value 100 ± 20 7 5 10 17 8.5 - 55 to + 150 Unit V V A A W ℃ Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient 1) Thermal Resistance from Juntion to Ambient 1) 4) (t ≤ 10 s) (Steady-State) Symbol RθJA Max. 25 50 Thermal Resistance from Juntion to Case (Steady-State) RθJC 8.8 1) The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R JA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application dep...