DATASHEET
ISL70023SEH, ISL73023SEH
100V, 60A Enhancement Mode GaN Power Transistor
FN8975 Rev. 2.00 Mar 8, 2018
The I...
DATASHEET
ISL70023SEH, ISL73023SEH
100V, 60A Enhancement Mode GaN Power
Transistor
FN8975 Rev. 2.00 Mar 8, 2018
The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power
transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) Low Dose Rate (LDR). Applications for these devices include commercial aerospace, medical, and nuclear power generation.
GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing i...