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EN39LV010

EON

CMOS 3.0 Volt-only Flash Memory

EN39LV010 1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory EN39LV010 FEATURES • Singl...


EON

EN39LV010

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Description
EN39LV010 1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory EN39LV010 FEATURES Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors. High performance - Full voltage range: access times as fast as 70 ns - Regulated voltage range: access times as fast as 45ns Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 μA typical standby current (standard access time to active mode) Flexible Sector Architecture: - Thirty-two 4 Kbyte sectors Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 90ms typical JEDEC Standard program and e...




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