Flash Memory. EN29LV400A Datasheet

EN29LV400A Memory. Datasheet pdf. Equivalent

Part EN29LV400A
Description 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Feature EN29LV400A Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its prod.
Manufacture EON
Datasheet
Download EN29LV400A Datasheet




EN29LV400A
EN29LV400A
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any
changes that have been made are the result of normal data sheet improvement and are noted in
the document revision summary, where supported. Future routine revisions will occur when
appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To
order these products, during the transition please specify “Eon top marking” or “cFeon top marking”
on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Elite Semiconductor Memory Technology Inc.
Rev. I, Issue Date: 2016/05/23



EN29LV400A
EN29LV400A
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV400A
FEATURES
3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for compatibility with
high performance 3.3 volt microprocessors.
High performance
- Access times as fast as 45 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 μA typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 K-byte, two 8 K-byte, one 32 K-byte,
and seven 64 K-byte sectors (byte mode)
- One 8 K-word, two 4 K-word, one 16 K-word
and seven 32 K-word sectors (word mode)
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS
Flash Technology
Low Vcc write inhibit < 2.5V
minimum 100K program/erase endurance
cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
Commercial and Industrial Temperature
Range
GENERAL DESCRIPTION
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need
for WAIT states in high-performance microprocessor systems.
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Elite Semiconductor Memory Technology Inc.
Rev. I, Issue Date: 2016/05/23







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