F59D1G161LB-45TG2M

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) x16 -Page Size: (1K + 32) Word (x16)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time x8 - Program time: 300us (Typ.) - Block Erase time: 4ms (Typ.)  Command/Address/Data Multiplexed I/O Port F59D1G81LB / F59D1G161LB (2M) 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - ECC Requirement: x8 – 1bit/512Byte, x16 – 1bit/256Word - Endurance:...