F59L1G81MA-25BCG2Y

ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) 1 Gbit (128M x 8) 3.3V NAND Flash Memory Reliable CMOS Floating Gate Technology - ECC Requirement: - 4bit/512Byte, - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Command Register Operation Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program Operation for High Performance Program Cache Read Operation Copy-Back Operati...