F59D1G81MA-45BG2L

ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word z Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.) z Command/Address/Data Multiplexed I/O Port F59D1G81MA / F59D1G161MA (2L) 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory z Hardware Data Protection - Program/Erase Lockout During Power Transitions z Reliable CMOS Floating Gate Technology - ECC Requirement: x8 - 4bit/512Byte, x16 - 4bit/256Word - Endurance: 100K Program/Erase Cycles - Da...