N-Channel Enhancement Mode MOSFET
HY5608W/A
N-Channel Enhancement Mode MOSFET
Features
• 80V/360A
RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tes...
Description
HY5608W/A
N-Channel Enhancement Mode MOSFET
Features
80V/360A
RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Switching application Power Management for Inverter Systems.
Pin Description
S
D G
TO-247-3L
S
D G
TO-3P-3L
D
G N-Channel MOSFET
Ordering and Marking Information
S
WA HY5608 HY5608
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code W : TO-247-3L
Date Code YYXXX WW
A : TO-3P-3L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous m...
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