HGN036N08S

HGN036N08S Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial P-1 80V N-Ch Power MOSFET VDS RDS(on),typ VGS=10V ID (Sillicon Limited) ID (Package Limited) 80 3.0 131 60 V mΩ A A DFN5x6 Drain Gate Part Number HGN036N08S Package Marking DFN5*6 GN036N08S Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25℃ - L=0.4mH, TC=25℃ TC=25℃ - Pin 1 S S S G Src D D D D Value 131 83 60 80 ±20 ...