HGP029NE4SL

HGB029NE4SL , HGP029NE4SL P-1 Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control TO-263 45V N-Ch Power MOSFET VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited) TO-220 45 V 2.2 mΩ 2.9 mΩ 2.5 mΩ 3.2 mΩ 182 A 120 A Drain Pin2 Gate Pin 1 Part Number HGB029NE4SL HGP029NE4SL Package Marking TO-263 GB029NE4SL TO-220 GP029NE4SL Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power...