HGP045N10S

HGP045N10S , HGB045N10S P-1 Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control 100V N-Ch Power MOSFET VDS RDS(on),typ TO-220 RDS(on),typ TO-263 ID (Sillicon Limited) ID (Package Limited) 100 V 3.7 mΩ 3.4 mΩ 160 A 100 A TO-263 TO-220 Drain Pin2 Gate Pin 1 Part Number HGP045N10S HGB045N10S Package Marking TO-220 GP045N10S TO-263 GB045N10S Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ T...