HGD080N08SL

HGD080N08SL Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial Part Number HGD080N08SL Package Marking TO-252 GD080N08SL P-1 80V N-Ch Power MOSFET VDS RDS(on),typ RDS(on),typ ID (Sillicon Limited) ID (Package Limited) VGS=10V VGS=4.5V 80 V 6.3 mΩ 8.7 mΩ 85 A 70 A TO-252 2 13 Drain Pin2 Gate Pin 1 Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25℃ - L=0.1mH, TC=...