HGP082N10M

HGP082N10M Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control Part Number HGP082N10M Package Marking TO-220 GP082N10M P-1 100V N-Ch Power MOSFET VDS RDS(on),typ RDS(on),max ID 100 V 6.4 mΩ 8.2 mΩ 100 A TO-220 Drain Pin2 Gate Pin 1 Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ - L=0.5mH, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Symbol RƟJC RƟJA ...