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HTJ500N03 Dataheets PDF



Part Number HTJ500N03
Manufacturers Hunteck
Logo Hunteck
Description 30V N-Ch Power MOSFET
Datasheet HTJ500N03 DatasheetHTJ500N03 Datasheet (PDF)

HTJ500N03 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial Part Number HTJ500N03 Package SOT23 Marking 17 P-1 30V N-Ch Power MOSFET VDS 30 V RDS(on),typ VGS=4.5V 43 mΩ RDS(on),typ VGS=2.5V 60 mΩ ID (Sillicon Limited) 3.5 A SOT-23 Drain Gate Src Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified.

  HTJ500N03   HTJ500N03


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HTJ500N03 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial Part Number HTJ500N03 Package SOT23 Marking 17 P-1 30V N-Ch Power MOSFET VDS 30 V RDS(on),typ VGS=4.5V 43 mΩ RDS(on),typ VGS=2.5V 60 mΩ ID (Sillicon Limited) 3.5 A SOT-23 Drain Gate Src Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Power Dissipation Operating and Storage Temperature ID VDS VGS IDM PD TJ, Tstg TA=25℃ TA=70℃ TA=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Symbol RθJA Value 3.5 2.4 30 ±12 14 1.04 -55 to150 Unit A V V A W ℃ Max Unit 120 ℃/W Ver 1.0 June. 2017 HTJ500N03 P-2 Electrical Characteris.


HGP082N10M HTJ500N03 HGB100N12S


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