Document
HTJ500N03
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
Part Number HTJ500N03
Package SOT23
Marking 17
P-1
30V N-Ch Power MOSFET
VDS 30 V
RDS(on),typ VGS=4.5V 43 mΩ
RDS(on),typ VGS=2.5V 60 mΩ
ID (Sillicon Limited)
3.5 A
SOT-23
Drain Gate
Src
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM PD TJ, Tstg
TA=25℃ TA=70℃ TA=25℃ -
Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient
Symbol RθJA
Value 3.5 2.4 30 ±12 14 1.04
-55 to150
Unit
A
V V A W ℃
Max Unit 120 ℃/W
Ver 1.0
June. 2017
HTJ500N03
P-2
Electrical Characteris.