HGP110N10SL

HGB110N10SL , HGP110N10SL P-1 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial TO-263 100V N-Ch Power MOSFET VDS RDS(on),typ RDS(on),typ TO-263 VGS=10V VGS=4.5V RDS(on),typ RDS(on),typ TO-220 VGS=10V VGS=4.5V ID (Sillicon Limited) 100 V 8.7 mΩ 10.7 mΩ 9.0 mΩ 11 mΩ 73 A TO-220 Drain Pin2 Gate Pin 1 Part Number HGB110N10SL HGP110N10SL Package Marking TO-263 GB110N10SL TO-220 GP110N10SL Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM...