HGN029NE4SL

HGN029NE4SL Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control P-1 45V N-Ch Power MOSFET VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited) 45 2.5 3.2 140 60 V mΩ mΩ A A DFN5x6 Drain Gate Part Number HGN029NE4SL Package Marking DFN5x6 GN029NE4SL Pin 1 S S S G Src D D D D Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25...