100V N-Ch Power MOSFET
HGB049N10S , HGP049N10S
P-1
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Ava...
Description
HGB049N10S , HGP049N10S
P-1
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
TO-263
100V N-Ch Power MOSFET
VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited)
100 V 3.9 mΩ 4.2 mΩ 152 A 120 A
TO-220
Drain Pin2 Gate Pin 1
Part Number HGB049N10S HGP049N10S
Package Marking TO263 GB049N10S TO220 GP049N10S
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ -
L=0...
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