HTJ450N02

HTJ450N02 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial Part Number HTJ450N02 Package SOT23 Marking 1Y P-1 20V N-Ch Power MOSFET VDS 20 V RDS(on),typ VGS=4.5V 36 mΩ RDS(on),typ VGS=2.5V 43 mΩ RDS(on),typ VGS=1.8V 58 mΩ ID (Sillicon Limited) 3.6 A SOT-23 Drain Gate Src Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Power Dissipation Operating and Storage Temperature ID VDS VGS IDM PD TJ, Tstg TA=25℃ TA=100℃ TA=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Symbol RθJA Value 3.6 2.9 20 ±12 14 1.04 -55 to150 Unit A V V A W ℃ Max Unit 120 ℃/W Ver 1.0 Aug. 2017 HTJ450N0...