120V N-Ch Power MOSFET
HGB059N12S , HGP059N12S
P-1
Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhan...
Description
HGB059N12S , HGP059N12S
P-1
Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
Part Number HGB059N12S HGP059N12S
Package Marking TO-263 GB059N12S TO-220 GP059N12S
120V N-Ch Power MOSFET
VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited)
120 4.4 4.7 160 120
V mΩ mΩ A A
TO-263
TO-220
Drain Pin2
Gate Pin 1
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=...
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